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 (R)
BULB39D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
s s s
NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (Suffix "T4")
3 1
APPLICATIONS s ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES DESCRIPTION The BULB39D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining wide RBSOA. The BUL series is designed for use in electronics transformers for halogen lamps.
D2PAK (TO-263) (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 850 450 9 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W
o o
C C
August 2001
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BULB39D
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 70
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 850 V V CE = 850 V V EB = 9 V I C = 100 mA L = 25 mH 450 T j = 125 o C Min. Typ. Max. 100 500 100 Unit A A A V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE V CEW Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Maximum Collector Emitter Voltage Without Snubber INDUCTIVE LOAD Storage Time Fall Time Diode Forward Voltage
IC = 1 A I C = 2.5 A IC = 1 A I C = 2.5 A IC = 5 A I C = 10 mA IC = 6 A V BB = -2.5 V t p = 10 s I C = 2.5 A V BE(off) = -5 V V CL = 300 V IC = 2 A
I B = 0.2 A I B = 0.5 A I B = 0.2 A I B = 0.5 A V CE = 10 V V CE = 5 V R BB = 0 L = 50H I B(on) = 0.5 A R BB = 0 L = 1 mH 4 10 450
0.13
0.5 1.1 1.1 1.3
V V V V
V
ts tf Vf
0.7 50
1.5 100 1.5
s ns V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BULB39D
Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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BULB39D
Inductive Fall Time Inductive Storage Time
Reverse Biased SOA
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BULB39D
TO-263 (D2PAK) MECHANICAL DATA
DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0o 4.88 15.00 1.27 1.40 2.40 0.40 8o 0o 10.00 8.50 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.016 8o 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 8.00 10.40 0.393 0.334 0.208 0.624 0.055 0.068 0.126 mm TYP. MAX. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 0.409 inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368
- Weight : 1.38 g (typ.) - The planaty of the slug must be within 30 m
P011P6/G
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BULB39D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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